SSM3J356R

5S-SSM3J356R
SSM3J356R
Toshiba Semiconductor and Storage
In stock
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Product Description
Packaging:1
Series:Cut Tape (CT)
FET Type:Active
Technology:P-Channel
Drain to Source Voltage (Vdss):MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25??????C:60V
Drive Voltage (Max Rds On:2A (Ta)
Min Rds On):4V
Vgs(th) (Max) @ Id:10V
Gate Charge (Qg) (Max) @ Vgs:2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:8.3nC @ 10V
Vgs (Max):330pF @ 10V
FET Feature:+10V
Power Dissipation (Max):-20V
Rds On (Max) @ Id:-
Vgs:1W (Ta)
Operating Temperature:300 mOhm @ 1A
Supplier Device Package:10V
Supplier Device Package:150??????C (TJ)
Package / Case:Surface Mount
Other:SOT-23F
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