SIHB22N60E-GE3-ND

5S-SIHB22N60E-GE3-ND
SIHB22N60E-GE3-ND
Vishay Siliconix
In stock
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Product Description
Packaging:1
Series:Tube
FET Type:Active
Technology:N-Channel
Drain to Source Voltage (Vdss):MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25??????C:600V
Drive Voltage (Max Rds On:21A (Tc)
Min Rds On):10V
Vgs(th) (Max) @ Id:4V @ 250??????A
Gate Charge (Qg) (Max) @ Vgs:86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1920pF @ 100V
Vgs (Max):??????30V
FET Feature:-
Power Dissipation (Max):227W (Tc)
Rds On (Max) @ Id:180 mOhm @ 11A
Vgs:10V
Operating Temperature:-55??????C ~ 150??????C (TJ)
Supplier Device Package:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3
Other:D2Pak (2 Leads + Tab)
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