IXTN200N10L2-ND

5S-IXTN200N10L2-ND
IXTN200N10L2-ND
IXYS
In stock
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Product Description
Packaging:1
Series:-
FET Type:Active
Technology:N-Channel
Drain to Source Voltage (Vdss):MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25??????C:100V
Drive Voltage (Max Rds On:178A
Min Rds On):10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:23000pF @ 25V
Vgs (Max):??????20V
FET Feature:-
Power Dissipation (Max):830W (Tc)
Rds On (Max) @ Id:11 mOhm @ 100A
Vgs:10V
Operating Temperature:-55??????C ~ 150??????C (TJ)
Supplier Device Package:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4
Other:miniBLOC
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