IPD60N10S4L12ATMA1

5S-IPD60N10S4L12ATMA1
IPD60N10S4L12ATMA1
MOSFET N-CH TO252-3
In stock
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Product Description
Packaging:Cut Tape (CT)
Series:Automotive
FET Type:HEXFET?
Technology:Active
Drain to Source Voltage (Vdss):N-Channel
Current - Continuous Drain (Id) @ 25??????C:MOSFET (Metal Oxide)
Drive Voltage (Max Rds On:100V
Min Rds On):60A (Tc)
Vgs(th) (Max) @ Id:4.5V
Gate Charge (Qg) (Max) @ Vgs:10V
Input Capacitance (Ciss) (Max) @ Vds:2.1V @ 46??????A
Vgs (Max):49nC @ 10V
FET Feature:3170pF @ 25V
Power Dissipation (Max):??????16V
Rds On (Max) @ Id:-
Vgs:94W (Tc)
Operating Temperature:12 mOhm @ 60A
Supplier Device Package:10V
Supplier Device Package:-55??????C ~ 175??????C (TJ)
Package / Case:Surface Mount
Other:PG-TO252-3-313
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