IPD60N10S412ATMA1

5S-IPD60N10S412ATMA1
IPD60N10S412ATMA1
MOSFET N-CH TO252-3
In stock
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Product Description
Packaging:Tape & Reel (TR)
Series:Automotive
FET Type:OptiMOS?
Technology:Active
Drain to Source Voltage (Vdss):N-Channel
Current - Continuous Drain (Id) @ 25??????C:MOSFET (Metal Oxide)
Drive Voltage (Max Rds On:100V
Min Rds On):60A (Tc)
Vgs(th) (Max) @ Id:10V
Gate Charge (Qg) (Max) @ Vgs:3.5V @ 46??????A
Input Capacitance (Ciss) (Max) @ Vds:34nC @ 10V
Vgs (Max):2470pF @ 25V
FET Feature:??????20V
Power Dissipation (Max):-
Rds On (Max) @ Id:94W (Tc)
Vgs:12.2 mOhm @ 60A
Operating Temperature:10V
Supplier Device Package:-55??????C ~ 175??????C (TJ)
Supplier Device Package:Surface Mount
Package / Case:PG-TO252-3-313
Other:TO-252-3
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