IPB180P04P4L02ATMA1CT-ND

5S-IPB180P04P4L02ATMA1CT-ND
IPB180P04P4L02ATMA1CT-ND
Infineon Technologies
In stock
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Product Description
Packaging:1
Series:Cut Tape (CT)
FET Type:Active
Technology:P-Channel
Drain to Source Voltage (Vdss):MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25??????C:40V
Drive Voltage (Max Rds On:180A (Tc)
Min Rds On):4.5V
Vgs(th) (Max) @ Id:10V
Gate Charge (Qg) (Max) @ Vgs:2.2V @ 410??????A
Input Capacitance (Ciss) (Max) @ Vds:286nC @ 10V
Vgs (Max):18700pF @ 25V
FET Feature:??????16V
Power Dissipation (Max):-
Rds On (Max) @ Id:150W (Tc)
Vgs:2.4 mOhm @ 100A
Operating Temperature:10V
Supplier Device Package:-55??????C ~ 175??????C (TJ)
Supplier Device Package:Surface Mount
Package / Case:PG-TO263-7-3
Other:TO-263-7
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