FQN1N60CTATB-ND

5S-FQN1N60CTATB-ND
FQN1N60CTATB-ND
Fairchild/ON Semiconductor
In stock
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Product Description
Packaging:2000
Series:Tape & Box (TB)
FET Type:Active
Technology:N-Channel
Drain to Source Voltage (Vdss):MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25??????C:600V
Drive Voltage (Max Rds On:300mA (Tc)
Min Rds On):10V
Vgs(th) (Max) @ Id:4V @ 250??????A
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:170pF @ 25V
Vgs (Max):??????30V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Rds On (Max) @ Id:3W (Tc)
Vgs:11.5 Ohm @ 150mA
Operating Temperature:10V
Supplier Device Package:-55??????C ~ 150??????C (TJ)
Supplier Device Package:Through Hole
Package / Case:TO-92-3
Other:TO-226-3
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