FQB33N10LTM

5S-FQB33N10LTM
FQB33N10LTM
MOSFET N-CH 100V 33A D2PAK
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Product Description
Packaging:Cut Tape (CT)
Series:QFET?
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25??????C:33A (Tc)
Drive Voltage (Max Rds On:5V
Min Rds On):10V
Vgs(th) (Max) @ Id:2V @ 250??????A
Gate Charge (Qg) (Max) @ Vgs:40nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:1630pF @ 25V
Vgs (Max):??????20V
FET Feature:-
Power Dissipation (Max):3.75W (Ta)
Rds On (Max) @ Id:127W (Tc)
Vgs:52 mOhm @ 16.5A
Operating Temperature:10V
Supplier Device Package:-55??????C ~ 175??????C (TJ)
Supplier Device Package:Surface Mount
Package / Case:D2PAK (TO-263AB)
Other:TO-263-3
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