FDP52N20-ND

5S-FDP52N20-ND
FDP52N20-ND
Fairchild/ON Semiconductor
In stock
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Product Description
Packaging:1
Series:Tube
FET Type:Active
Technology:N-Channel
Drain to Source Voltage (Vdss):MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25??????C:200V
Drive Voltage (Max Rds On:52A (Tc)
Min Rds On):10V
Vgs(th) (Max) @ Id:5V @ 250??????A
Gate Charge (Qg) (Max) @ Vgs:63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2900pF @ 25V
Vgs (Max):??????30V
FET Feature:-
Power Dissipation (Max):357W (Tc)
Rds On (Max) @ Id:49 mOhm @ 26A
Vgs:10V
Operating Temperature:-55??????C ~ 150??????C (TJ)
Supplier Device Package:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
Other:
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