FDC658P

5S-FDC658P
FDC658P
MOSFET P-CH 30V 4A SSOT-6
In stock
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Product Description
Packaging:Cut Tape (CT)
Series:PowerTrench?
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25??????C:4A (Ta)
Drive Voltage (Max Rds On:10V
Min Rds On):3V @ 250??????A
Vgs(th) (Max) @ Id:12nC @ 5V
Gate Charge (Qg) (Max) @ Vgs:750pF @ 15V
Input Capacitance (Ciss) (Max) @ Vds:??????20V
Vgs (Max):-
FET Feature:1.6W (Ta)
Power Dissipation (Max):50 mOhm @ 4A
Rds On (Max) @ Id:10V
Vgs:-55??????C ~ 150??????C (TJ)
Operating Temperature:Surface Mount
Supplier Device Package:SuperSOT?-6
Supplier Device Package:SOT-23-6 Thin
Package / Case:TSOT-23-6
Other:
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