SSM6P49NU

5S-SSM6P49NU
SSM6P49NU
Toshiba Semiconductor and Storage
In stock
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Product Description
Packaging:1
Series:Cut Tape (CT)
FET Type:Active
FET Feature:2 P-Channel (Dual)
Drain to Source Voltage (Vdss):Logic Level Gate
Current - Continuous Drain (Id) @ 25??????C:20V
Rds On (Max) @ Id:4A
Vgs:45 mOhm @ 3.5A
Vgs(th) (Max) @ Id:10V
Gate Charge (Qg) (Max) @ Vgs:1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds:6.74nC @ 4.5V
Power - Max:480pF @ 10V
Operating Temperature:1W
Mounting Type:150??????C (TJ)
Package / Case:Surface Mount
Supplier Device Package:6-WDFN Exposed Pad
Other:6-UDFN (2x2),,,
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