QJD1210011

5S-QJD1210011
QJD1210011
MOSFET 2N-CH 1200V 100A SIC
In stock
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Product Description
Packaging:Bulk
Series:-
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25??????C:100A
Rds On (Max) @ Id:25 mOhm @ 100A
Vgs:20V
Vgs(th) (Max) @ Id:5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:10200pF @ 800V
Power - Max:900W
Operating Temperature:-40??????C ~ 175??????C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
Other:,,,
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