BYVB32-50-E3/81GICT-ND

5S-BYVB32-50-E3/81GICT-ND
BYVB32-50-E3/81GICT-ND
Vishay Semiconductor Diodes Division
In stock
L/C, T/T, Western Union, Paypal
Shipping Immediately ASAP
Product Description
Packaging:1
Series:Cut Tape (CT)
Diode Configuration:Active
Diode Type:1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):Standard
Current - Average Rectified (Io) (per Diode):50V
Voltage - Forward (Vf) (Max) @ If:18A
Speed:1.15V @ 20A
Reverse Recovery Time (trr):Fast Recovery =< 500ns
Current - Reverse Leakage @ Vr:> 200mA (Io)
Operating Temperature - Junction:25ns
Mounting Type:10??????A @ 50V
Package / Case:-65??????C ~ 150??????C
Supplier Device Package:Surface Mount
Other:TO-263-3,D2Pak (2 Leads + Tab),TO-263AB,TO-263AB,
Related special

  • BQ51013BRHLR
  • Texas Instruments
  • Wireless Power Receiver PMIC 20-VQFN (3.5x4.5)
  • In stock
  • B2B-PH-K-S
  • JST
  • Connector Header Through Hole 2 position 0.079" (2.00mm)
  • In stock
  • B06B-PNISK-1A
  • JST
  • Connector Header Through Hole 6 position 0.079" (2.00mm)
  • In stock
  • BF3F-71GF-P2.0
  • JST
  • JST JFA connector J-PF3 press fit type Terminal
  • In stock
  • BU21010MUV-E2
  • Rohm Semiconductor
  • IC CTLR CAP SENSOR 8CH 16VQFN
  • In stock
  • BU21050FS-E2
  • Rohm Semiconductor
  • IC CAP SENSOR SWITCH 8CH 32-SSOP
  • In stock
  • BU21050FS-E2
  • Rohm Semiconductor
  • IC CAP SENSOR SWITCH 8CH 32-SSOP
  • In stock